Referenced Items are not available for this document.
We proposed counter doping into a heavily and uniformly doped channel region of SOI MOSFETs. This enabled us to suppress the short channel effects with proper threshold voltage V/sub th/ and to eliminate parasitic edge or back gate transistors. We derived a model for V/sub th/ as a function of the projected range, Rp and dose, /spl Phi//sub D/, of the counter doping, and showed that V/sub th/ is invariable even when the as-implanted counter doping profile redistributes. Using this technology, we demonstrated a V/sub th/ roll-off free 0.075 /spl mu/m-L/sub Geff/ nMOSFET with low off-state current.
Published in:
Electron Device Letters, IEEE
(Volume:17
,
Issue:
1
)
Date of Publication: Jan. 1996
- Page(s):
- 1 - 3
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5165634
- Digital Object Identifier :
- 10.1109/55.475558
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan. 1996
- Sponsored by :
- IEEE Electron Devices Society
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