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The silicon vertical MOSFET RF power amplifier described in this paper is the industry’s first to utilize high voltage vertical technology. Operating under pulse conditions of 200μsec pulse width and 10% duty cycle it delivers more than 100W of peak power. Operating in Class AB with only 50mA of bias current the device achieves more than 20dB of gain and 47% power added efficiency at P1dB compression across 200MHz of bandwidth at L-Band from 1.2GHz to 1.4GHz. The DC characteristics include a BVdss of 115 volts enabling high voltage operation with a 48V power supply.