By Topic

Analytical Extraction of Extrinsic and Intrinsic FET Parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ban Leong Ooi ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Zheng Zhong ; Mook-Seng Leong

The least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional ldquocold FETrdquo and ldquohot FETrdquo modeling constraints and allows an ease in inline process tracking.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:57 ,  Issue: 2 )