By Topic

A CMOS Image Sensor With In-Pixel Two-Stage Charge Transfer for Fluorescence Lifetime Imaging

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hyung-June Yoon ; Grad. Sch. of Electron. Sci. & Technol., Shizuoka Univ., Hamamatsu ; Shinya Itoh ; Shoji Kawahito

A CMOS image sensor for time-resolved fluorescence lifetime imaging with subnanosecond time resolution is presented. In order to analyze the fluorescence lifetime, the proposed CMOS image sensor has two charge transfer stages using a pinned photodiode structure in which the first charge transfer stage is for the time-resolved sifting of fluorescence in all the pixels simultaneously and the second charge transfer stage is for reading the signals in each pixel sequentially with correlated double sampling operation. A 0.18-mum CMOS image sensor technology with a pinned photodiode process option is used for the implementation of a 256 times 256 CMOS image sensor. The decaying images and lifetimes of fura-2 solutions having different concentrations are successfully measured with a 250-ps time step using the CMOS image sensor and ultraviolet laser diode as a light source.

Published in:

IEEE Transactions on Electron Devices  (Volume:56 ,  Issue: 2 )