By Topic

A manufacturable process to improve thermal stability of 0.25-μm cobalt silicided poly gate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

A CoSi2 salicidation process using a thin titanium capping layer is developed to improve the thermal stability of deep submicron CoSi2/poly stacks. 50 nm CoSi2 was uniformly formed on 0.25-μm wide poly lines. The electrical results show that the lines formed by a capping process using Ti can withstand higher thermal treatment (750° C for 30 min) without significant degradation. This work shows that the modified CoSi2 process should be considered for 0.25-μm CMOS applications

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:8 ,  Issue: 4 )