Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Modeling dynamic clustering of arsenic including non-negligible concentrations of arsenic-point defect pairs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bauer, H. ; Fraunhofer Inst. fur Integrierte Schaltungen, Erlangen, Germany ; Pichler, Peter ; Ryssel, Heiner

The time dependent deactivation of RTA-activated arsenic-doped samples was studied for chemical concentrations from 2·1020 cm-3 to 1·1021 cm-3 in the temperature range from 700°C to 900°C using a newly developed experimental set-up. It is based on the use of homogeneously doped SOI material which helped to avoid experimental problems, allowed a repeated usage of the same samples, and simplified the interpretation of the electrical measurements. The dependence of the active concentrations after long-time anneals on the total concentration indicated that the deactivation behavior can be described by a simple cluster law. But even at low concentrations it was reported in the literature that the electron concentration is significantly below the total arsenic concentration. This was attributed to pair formation between arsenic atoms and intrinsic point defects. Intended as an engineering model, the model proposed here combines both approaches and gives a consistent dynamical description of the electrically active arsenic concentration from low to high concentrations

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:8 ,  Issue: 4 )