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An accurate and efficient model for boron implants through thin oxide layers into single-crystal silicon

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7 Author(s)
Morris, S.J. ; PRC/MER, Texas Univ., Austin, TX, USA ; Yang, Shyh‐Horng ; Lim, D.H. ; Park, C.
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This paper presents a computationally efficient and accurate depth profile model for boron implants through a thin (0-50 nm) oxide layer into single-crystal silicon. This is the first reported model with explicit dependence on all of the key implant parameters, which include oxide thickness, implant energy, dose, tilt angle, and rotation angle. The detailed effects of thin oxide layers on the tilt and rotation angle, as well as the dose and energy dependencies of boron profiles, have been studied as the basis of the model. It is shown that this model is able to predict the profile dependencies very well, including subtle, unexpected behavior of the implanted profiles for certain implant conditions. The model has been implemented into SUPREM 3, SUPREM 4, and FLOOPS in order to demonstrate its capabilities

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:8 ,  Issue: 4 )