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Trajectory split method for Monte Carlo simulation of ion implantation

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5 Author(s)
W. Bohmayr ; Inst for Microelectron., Tech. Univ., Vienna, Austria ; A. Burenkov ; J. Lorenz ; H. Ryssel
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A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is presented. The trajectory split method ensures a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result, the time required to perform a simulation with comparable statistical accuracy is drastically reduced. The advantages of the new approach have been confirmed by a thorough statistical analysis

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:8 ,  Issue: 4 )