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Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies

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3 Author(s)
Azam, S. ; Dept. of Phys., Chem. & Biol. (IFM), Linkoping Univ., Linkoping ; Jonsson, R. ; Wahab, Q.

This paper describes the design, fabrication and measurement of two single-stage class-AB power amplifiers covering the frequency band from 0.7-1.8 GHz using a SiC MESFET and a GaN HEMT. The measured maximum output power for the SiC amplifier at Vd = 48 V was 41.3 dBm (~13.7 W), with a PAE of 32% and a power gain above 10 dB. At a drain bias of Vd= 66 V at 700 MHz the Pmax was 42.2 dBm (~16.6 W) with a PAE of 34.4%. The measured results for GaN amplifier are; maximum output power at Vd = 48 V is 40 dBm (~10 W), with a PAE of 34% and a power gain above 10 dB. The results for SiC amplifier are better than for GaN amplifier for the same 10-W transistor.

Published in:

Microwave Conference, 2008. EuMC 2008. 38th European

Date of Conference:

27-31 Oct. 2008