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Technique for monitoring slow interface trap characteristics in MOS capacitors

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3 Author(s)
Tanner, P. ; Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld. ; Dimitrijev, S. ; Harrison, H.B.

A new experimental technique presented in the Letter simultaneously extracts the trap response time as well as trap density and energy in the silicon bandgap. The technique is illustrated by measuring the trap density increase in a MOS capacitor due to constant current stressing and is compared with the results obtained using the conventional quasistatic C/V technique

Published in:

Electronics Letters  (Volume:31 ,  Issue: 21 )

Date of Publication:

12 Oct 1995

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