Measurement and Analysis of Parasitic Capacitance in FinFETs with High-k Dielectrics and Metal-Gate Stack

FinFET is one of the promising device architectures for sub-32 nm CMOS technology nodes. These non-planar devices benefit from near bulk-Si processing and improved control of short channels due to quasi gate-all-around operation. Their device operation is well studied and optimized in last half decade by various research groups. In this paper, we help evaluate the circuit potential of FinFETs by experimentally comparing their parasitic capacitance to that of the planar FDSOI MOSFETs. It is shown that n- and p-channel FinFETs achieve as high as 50% and 28% parasitic capacitance reduction compared to the planar FDSOI MOSFETs respectively.