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AlGaN/GaN Schottky Barrier Photodetector With Multi- {\rm Mg}_{\rm x} {\rm N} _{\rm y} /GaN Buffer

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6 Author(s)
S. J. Chang ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; K. H. Lee ; P. C. Chang ; Y. C. Wang
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AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.

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IEEE Sensors Journal  (Volume:9 ,  Issue: 2 )