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Negative Differential Resistance in Buried-Channel \hbox {Ge}_{x} \hbox {C}_{1 - x} pMOSFETs

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5 Author(s)
En-Shao Liu ; Microelectron. Res. Center, Univ. of Texas, Austin, TX ; Kelly, D.Q. ; Donnelly, J.P. ; Tutuc, E.
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We study the device characteristics of Si-capped GexC1-x pMOSFETs from room temperature down to 77 K. The output characteristics of these devices reveal a negative differential resistance (NDR) at temperatures below 150 K. Our measurements indicate a higher effective carrier mobility in the buried-channel GexC1-x with respect to the Si-reference sample, which suggests that the observed NDR is due to real-space transfer of hot holes from the higher mobility GexC1-x channel layer into the lower mobility Si cap layer.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )