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High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory

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11 Author(s)
Sung-Jin Choi ; Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon ; Jin-Woo Han ; Moon-Gyu Jang ; Kim, Jin Soo
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A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segregated Schottky contact at the source side can generate hot electrons, and it can be used to provide high injection efficiency at low voltage without any constraint on the choice of the proper gate and drain voltage. The DSSB FinFET SONOS device is therefore a promising candidate for nor-type flash memory with high-speed and low-power programming.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )