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A New Thin-Film Transistor Pixel Structure Suppressing the Leakage Current Effects on AMOLED

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6 Author(s)
Hyun-Sang Park ; Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul ; Hee-Sun Shin ; Lee, Woocheul ; Seung-Hee Kuk
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We propose a new pixel structure employing solid-phase crystallized silicon thin-film transistors which suppresses the leakage current effects on active-matrix organic light-emitting diode (AMOLED) displays. The pixel structure has been fabricated on a glass substrate employing the field-enhanced rapid thermal annealing technology. In the proposed pixel, the charge holding capability is considerably enhanced due to the capacitor located between two series-connected switch transistors. Our experimental results shows that the average variation range of the OLED current is suppressed less than 0.5% while the conventional one exceeded 4%.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 3 )

Date of Publication:

March 2009

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