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Modeling and characterization of reverse recovery performance of high-power GaAs Schottky and silicon P-i-N rectifiers

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3 Author(s)
Winterhalter, C.R. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Pendharkar, S. ; Shenai, K.

The reverse recovery characteristics of high-power GaAs Schottky and silicon P-i-N rectifiers are studied at various temperatures. Devices were first characterized to obtain measured data for forward and reverse I-V, C-V, reverse breakdown voltage, and reverse recovery performance and then simulated using an advanced two-dimensional (2-D) mixed device and circuit simulator. The measured and simulated results show significant reduction in reverse recovery tail-current for the GaAs Schottky rectifier. At higher temperatures, the reverse recovery performance of the GaAs Schottky rectifier improves while that of the silicon P-i-N rectifier is degraded. These results represent the first demonstration and application of mixed device and circuit simulation in accurately predicting the reverse recovery performance of power rectifiers

Published in:

Power Electronics Specialists Conference, 1995. PESC '95 Record., 26th Annual IEEE  (Volume:2 )

Date of Conference:

18-22 Jun 1995