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Recently, the evolutionary techniques, like genetic algorithms (GA), has attracted considerable attention among various heuristic optimization techniques. So, in this paper, a genetic algorithm is implemented to study and model the electron mobility in wurtzite Gallium Nitride-based devices. Further, our obtained results are tested and compared with numerical data where a good agreement has been found for wide range of temperature, doping and applied high electric field. The optimized analytical models have been incorporated into the devices simulators to study the GaN-based MOSFETs for optoelectronics and high frequencies applications.