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Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices

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5 Author(s)
Delaunay, P.-Y. ; Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL ; Nguyen, Binh Minh ; Hoffman, D. ; Huang, E.K.-w.
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The recent introduction of a M-structure design improved both the dark current and R0 A performances of type-II InAs-GaSb photodiodes. A focal plane array fabricated with this design was characterized at 81 K. The dark current of individual pixels was measured between 1.1 and 1.6 nA, 7 times lower than previous superlattice FPAs. This led to a higher dynamic range and longer integration times. The quantum efficiency of detectors without antireflective coating was 74%. The noise equivalent temperature difference reached 23 mK, limited only by the performance of the testing system and the read out integrated circuit. Background limited performances were demonstrated at 81 K for a 300 K background.

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Quantum Electronics, IEEE Journal of  (Volume:45 ,  Issue: 2 )