By Topic

The Effects of Limited Drain Current and On Resistance on the Performance of an LDMOS Inverse Class-E Power Amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Fei You ; Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu ; Songbai He ; Xiaohong Tang ; Xiangke Deng

In this paper, the effects of limited drain current and transistor's on resistance on the performance of an LDMOS inverse class-E power amplifier (PA) are analyzed using a simplified transistor model of piecewise linear dc I-V curves. The minimal magnitude of driving signal, the maximal voltage gain, and the maximal output power of an inverse class-E PA can be defined with the maximal drain kept. The theoretical and simulated results of amplifier performance, such as drain efficiency and output voltage, are compared to verify the analysis, and the nonlinear relation among the drain dc supply voltage, input/output voltage, and phase of an inverse class-E PA caused by limited drain current are presented. The effects on the amplifier performance are further verified by the measured results of a 945-MHz transmission-line inverse class-E amplifier in comparison with the corresponding theoretical and simulated results.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:57 ,  Issue: 2 )