First Internal Spacers' Introduction in Record High $I_{\rm ON}/I_{\rm OFF}\ \hbox{TiN/HfO}_{2}$ Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements

For the first time, internal spacers have been introduced in multichannel CMOSFET (MCFET) structures, featuring a decrease of the intrinsic CV/I delay by 39%. The process steps introduced for this new MCFET technological option are studied and optimized in order to achieve excellent I
_ON
/I
_OFF
characteristics (NMOS: 2.33 mA/mum at 27 pA/mum and PMOS: 1.52 mA/mum at 38 pA/mum). A gate capacitance
C

_gg
reduction of 32% is measured, thanks to
S
-parameter extraction. Moreover, a significant improvement of the analogical figure of merit is measured compared with optimized fully depleted silicon-on-insulator planar reference; the voltage gain
A

_VI
( =
gm
/
g

_ds
) is improved by 92%.