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GHz Class Low-Power Flash ADC for Broadband Communications

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4 Author(s)
Sexton, J. ; Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester ; Tauqeer, T. ; Mohiuddin, M. ; Missous, M.

A low-power (~400 mW) high-speed (2-4 GS/s) 4-bit analogue-to-digital converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (420degC) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard digital signal processing (DSP) systems whilst dissipating only 400 mW.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008

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