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Simulation studies of current voltage characteristics of inhomogeneous Schottky diode with discrete distribution of barrier heights

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1 Author(s)
Chand, Subhash ; Dept. of Appl. Sci. & Humanities, Nat. Inst. of Technol., Hamirpur

The current voltage characteristics of inhomogeneous Schottky contact with discrete Gaussian distribution of barrier heights are simulated considering thermionic emission diffusion theory. The diode parameters are extracted by fitting of simulated current voltage data into thermionic emission diffusion current equation. The effect of discrete Gaussian distribution of barrier heights on barrier parameters like barrier height, ideality factor and activation energy plots are discussed.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008