By Topic

Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Florovic, M. ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava ; Kovac, J. ; Kordos, P. ; Skriniarova, J.
more authors

Electrical properties of the ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices were investigated. Two different preparation techniques were used, electron beam evaporation (EBE) and pulsed laser deposition (PLD). The EBE contacts show more than 10-times lower specific contact resistance than those prepared by PLD. Characterization of the HFETs prepared yielded higher saturation drain current and peak transconductance if EBE ohmic contacts were used comparing to PLD ohmic contacts. An optimisation of the PLD procedure to be used at the Al0.3Ga0.7N/GaN device preparation is in progress.

Published in:

Advanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on

Date of Conference:

12-16 Oct. 2008