Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate

An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current I
_th
of 104 mA was obtained at a stripe width of 25 mum and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at 1.3 I
_th
.