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Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate

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5 Author(s)
Okumura, T. ; Quantum Nanoelec- tronics Res. Center, Tokyo Inst. of Technol., Tokyo ; Maruyama, T. ; Yonezawa, H. ; Nishiyama, N.
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An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current Ith of 104 mA was obtained at a stripe width of 25 mum and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at 1.3 Ith.

Published in:

Photonics Technology Letters, IEEE  (Volume:21 ,  Issue: 5 )

Date of Publication:

March1, 2009

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