By Topic

Mesoscopic EMR Device Magnetic Sensitivity in I V I V Configuration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Boone, T.D. ; Solopower, Inc., San Jose, CA ; Smith, N. ; Folks, Liesl ; Katine, J.A.
more authors

Extraordinary magnetoresistance devices with critical dimensions below 50 nm have been developed in InAs 2-D electron gas (2DEG) quantum well heterostructures, and show the same magnetic sensitivity as Giant magnetoresistance magnetic recording sensors. A new device design, in which fingers of metal extend into the semiconductor mesa to form leads, yields higher signal and operating currents than the more conventional design with semiconductor tab contacts. Devices built with the 2DEG very close to the surface yield high-signal and high-current carrying capacity, as required for scanning probe and magnetic recording applications.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )