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A 2.5-GS/s 30-mW 4-bit Flash ADC in 90nm CMOS

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2 Author(s)
Timmy Sundstrom ; Division of Electronic Devices, Department of Electrical Engineering Linköping University, SE-584 39 Linköping, Sweden, E-mail: ; Atila Alvandpour

A 2.5 GS/s flash ADC, fabricated in 90 nm CMOS, avoids traditional power, speed and accuracy trade-offs by using comparator redundancy with power-gating capabilities. Redundancy removes the need to control comparator offsets, allowing the large process-variation induced mismatch of small devices in nanometer technologies. This enables the use of small-sized, ultra-low-power comparators. Measurement results show that the ADC dissipates 30 mW at 1.2 V. With 63 gate-able comparators, the ADC achieves 4.0 effective number of bits.

Published in:

NORCHIP, 2008.

Date of Conference:

16-17 Nov. 2008