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A 90nm CMOS UWB LNA

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3 Author(s)
Axholt, A. ; Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden ; Ahmad, W. ; Sjoland, H.

A single-ended two=stage 3.1-10.6 GHz Low Noise Amplifier aimed for Ultra Wide Band (UWB) communication is presented. The LNA is fabricated in a 90 nm CMOS process and measures just 0.31×0.41 mm2 including pads. The first stage topology is common-gate, to achieve a wideband input match. The second stage is a common source stage with resistive shunt feedback, to achieve high and flat gain over a wide frequency range. The chip was measured using RF-probes and has a gain of 17.25±1.25 dB, a noise figure of 4.1=9.4 dB, and an input reflection S11 better than -12 dB between 3.1 GHz and 10.6 GHz, while consuming 8.6 mA from a 1V supply.

Published in:

NORCHIP, 2008.

Date of Conference:

16-17 Nov. 2008

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