Referenced Items are not available for this document.
This letter describes a Ku-band power amplifier fabricated with a one-chip 0.45 μm×16.8 mm GaAs-based heterojunction FET (HJFET), in which a 40.9 dBm (12.3 W) output power with 48% power-added efficiency (PAE) and 10.1 dB linear gain was achieved at 12 GHz. To our knowledge, this is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:5
,
Issue:
11
)
Date of Publication: Nov 1995
- Page(s):
- 402 - 404
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 5110719
- Digital Object Identifier :
- 10.1109/75.473528
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1995
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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