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A 12-GHz, 12-W HJFET amplifier with 48% peak power-added efficiency

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3 Author(s)
Matsunaga, K. ; Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan ; Okamoto, Y. ; Kuzuhara, M.

This letter describes a Ku-band power amplifier fabricated with a one-chip 0.45 μm×16.8 mm GaAs-based heterojunction FET (HJFET), in which a 40.9 dBm (12.3 W) output power with 48% power-added efficiency (PAE) and 10.1 dB linear gain was achieved at 12 GHz. To our knowledge, this is the highest PAE, gain and output power combination achieved by a single FET power amplifier at this frequency.

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:5 ,  Issue: 11 )