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Planar InP-InGaAs single-growth avalanche photodiodes with no guard rings

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6 Author(s)
Tarof, L.E. ; Bell-Northern Res., Ottawa, Ont., Canada ; Bruce, R. ; Knight, D.G. ; Yu, J.
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A novel single-growth planar avalanche photodiode (APD) structure without guard rings is described. InP-InGaAs separate absorption, charge sheet, grading, and multiplication (SAGCM) APD's have been fabricated using the new edge breakdown suppression method. A very low, dark current of 0.6 nA at 0.98 of the breakdown voltage (BV) was measured for a 30-/spl mu/m-diameter device. The maximum -3-dB electrical bandwidth was 6.1 GHz, and in the absence of obvious inductive peaking.<>

Published in:
Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 11 )

Date of Publication: Nov. 1995

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