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Gate-first high-k/metal gate stack for advanced CMOS technology

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11 Author(s)
Nara, Y. ; Semicond. Leading Edge Technol. (Selete), Tsukuba, Japan ; Mise, N. ; Kadoshima, M. ; Morooka, T.
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Practical and manufacturable solutions for metal gate/dual high-k CMOS integration are presented. In order to overcome the difficulties of threshold voltage control of metal gate/high-k gate stack especially for gate-first integration, several material designs have been proposed so far. These include different metal gate materials and different high-k materials which are separately used in nMOS and pMOS transistors. These approaches sometimes bring about complicated CMOS integration scheme. In this paper, therefore, we will give simple metal gate/dual high-k CMOS fabrication processes with low threshold voltages which are suitable for scaled CMOS device manufacturing.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008

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