Referenced Items are not available for this document.
Temperature dependence of photoluminescence properties of CdS
CdSxSe1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when the temperature increases from 10 K to 300 K. The sulfur component (x) of CdSxSe1-x QDs is about 86.45% by calculation approximatively from PL peak energy at room temperature following Vigo¿s Law. We also obtain the parameters of the varshni relation for CdSxSe1-x QDs from PL peak energy as a function of temperature and the best-fit curve.
Published in:
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Date of Conference: 20-23 Oct. 2008
- Page(s):
- 1045 - 1047
- E-ISBN :
- 978-1-4244-2186-2
- Print ISBN:
- 978-1-4244-2185-5
- INSPEC Accession Number:
- 10440674
- Conference Location :
- Beijing
- Digital Object Identifier :
- 10.1109/ICSICT.2008.4734715
- Product Type:
- Conference Publications
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