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Temperature dependence of photoluminescence properties of CdSxSe1−x quantum dots prepared on silicon substrate

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8 Author(s)
Chen, X. ; Sch. of Phys. & Optoelectron. Technol., Dalian Univ. of Technol., Dalian, China ; Zhang, H.Q. ; Hu, L.Z. ; Yu, D.Q.
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CdSxSe1-x quantum dots (QDs) were prepared on silicon substrate by a simple physical method. The temperature dependent photoluminescence (PL) properties of the CdSxSe1-x QDs have been investigated in a temperature range of 10-300 K. The PL intensity reveals an unusual increasing behaviour with increasing temperature in the range of 180 - 260 K. And the energy gap shows a redshift of 62.23 meV when the temperature increases from 10 K to 300 K. The sulfur component (x) of CdSxSe1-x QDs is about 86.45% by calculation approximatively from PL peak energy at room temperature following Vigo¿s Law. We also obtain the parameters of the varshni relation for CdSxSe1-x QDs from PL peak energy as a function of temperature and the best-fit curve.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008