By Topic

Reducing threshold voltage of organic field-effect transistor by using ZrO2/PMMA as gate dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Liwei Shang ; Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China ; Ming Liu ; Deyu Tu ; Lijuan Zhen
more authors

By depositing a PMMA (poly(methyl methacrylate)) layer on top of an evaporated layer of ZrO2, the leakage has 4 orders of magnitude reducing compared with bare ZrO2 layer. Low roughness of PMMA/ZrO2 surface produces a high quality interface between the organic semiconductor and the combined insulator, thus the device has a significant improvement in performance. The typical field effect mobility, on/off current ratio, and sub-threshold slope of OFETs with bilayer dielectric are 5.6×10-2 cm2/Vs, 1.2×103, and 0.3 V/decade respectively. It is noticeable that the threshold voltage is only 0.1 V.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008