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Fabrication and characteristics of ZnO-based thin film transistors

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9 Author(s)
Dedong Han ; Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China ; Yi Wang ; Shengdong Zhang ; Lei Sun
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ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by ID-VD and ID-VG measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm2/V · s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008