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ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by ID-VD and ID-VG measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6.86 cm2/V Â· s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).