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For the first time, we report that the copper oxide (CuxO) based resistive random access memory (RRAM) cell can achieve 104 cycles (i.e. ~10x better) as a new record as well as elimination of the initial Â¿formingÂ¿ than reported in literature. The copper oxide is integrated in MIM (metal-insulator-metal) structure and is grown by plasma oxidation of Cu substrate, with CuO near upper surface and graded CuxO (i.e. increasingly Cu rich or O-vacancies rich) toward the Cu substrate. A thinner CuO upper layer can eliminate Â¿formingÂ¿ process and, for in turn, greatly enhance the endurance of resistive switching by eliminating the damage during the Â¿formingÂ¿ process.