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Challenge of nanoelectronic materials and devices toward new nonvolatile memories

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2 Author(s)
Nishi, Yoshio ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Jameson, J.

This paper shows that that H plays a role in the forming of oxide RRAM which is derived from studies of both the electrical and physical properties of the oxides. Going forward, there is a clear need for additional studies that combine careful physical and electrical characterization of oxide and sulfide RRAM devices, as electrical measurements alone are ambiguous. If a thorough understanding of the underlying physical mechanisms can be achieved, RRAM holds promise for becoming a low-cost, low-power, highly scalable solution for nonvolatile memory products for the IC industry.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008

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