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A nonvolatile static random access memory (NVSRAM) cell with two back-up CuxO memory devices is proposed in this paper. The manufacturing process is compatible with the standard CMOS process. By adopting a dynamic supply voltage scheme, the proposed cell can work correctly in four different operation modes. Compared with the standard SRAM cell, the proposed cell offers non-volatile storage which allows the unused blocks of SRAM to be powered down to save energy.