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Nonvolatile SRAM cell based on CuxO

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9 Author(s)
Xiaoyong Xue ; ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China ; Jin, Gang ; Ji Zhang ; Le Xu
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A nonvolatile static random access memory (NVSRAM) cell with two back-up CuxO memory devices is proposed in this paper. The manufacturing process is compatible with the standard CMOS process. By adopting a dynamic supply voltage scheme, the proposed cell can work correctly in four different operation modes. Compared with the standard SRAM cell, the proposed cell offers non-volatile storage which allows the unused blocks of SRAM to be powered down to save energy.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008