Referenced Items are not available for this document.
300 mm silicon single crystals have been grown using 24-28¿ hot zones with the aid of numerical simulation. Mechanical strength of silicon seeds has been tested and a new style seed chuck developed. The damage layers during cutting, double side grinding (DSG) and double side polishing (DSP) have been investigated. The processing technology and the defects in silicon based materials such as silicon on insulator (SOI) and silicon germanium (SiGe) have also been discussed.
Published in:
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Date of Conference: 20-23 Oct. 2008
- Page(s):
- 769 - 772
- E-ISBN :
- 978-1-4244-2186-2
- Print ISBN:
- 978-1-4244-2185-5
- INSPEC Accession Number:
- 10440617
- Conference Location :
- Beijing
- Digital Object Identifier :
- 10.1109/ICSICT.2008.4734657
- Product Type:
- Conference Publications
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