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Advanced silicon and silicon-based materials for fast transition from micrometer- to nanometer-scale integrated-circuit technology

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10 Author(s)
Hailing Tu ; Nat. Eng. Res. Center for Semicond. Mater., Gen. Res. Inst. for Nonferrous Metals, Beijing, China ; Xiaolin Dai ; Guanliang Wan ; Haibin Chen
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300 mm silicon single crystals have been grown using 24-28¿ hot zones with the aid of numerical simulation. Mechanical strength of silicon seeds has been tested and a new style seed chuck developed. The damage layers during cutting, double side grinding (DSG) and double side polishing (DSP) have been investigated. The processing technology and the defects in silicon based materials such as silicon on insulator (SOI) and silicon germanium (SiGe) have also been discussed.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008