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Piezomobility description of strain-induced mobility

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4 Author(s)
O'Neill, A.G. ; Sch. of Electr., Electron. & Comput. Eng., Newcastle Univ., Newcastle upon Tyne, UK ; Tsang, Y.L. ; Gallacher, B.J. ; Olsen, S.H.

The piezoresistance model has commonly been used to describe mobility enhancement for low levels of process induced stress in CMOS technology. However, many reports show it failing at the high levels of strain needed for future technology generations. This is because an approximation is made which is only valid for very low stress levels. The piezomobility formulation removes this approximation in the commonly-used piezoresistance model such that it can estimate mobility accurately to much higher stress regimes while retaining its simplicity. The validity of the new formulation is demonstrated for Monte Carlo simulations of mobility, nMOSFETs, pMOSFETs, and nanowires in stress regimes where the commonly-used piezoresistance model has previously been reported to fail.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008

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