Cart (Loading....) | Create Account
Close category search window

Modeling the gate current 1/f noise and its application to advanced CMOS devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Crupi, F. ; DEIS, Univ. of Calabria, Rende, Italy ; Magnone, P. ; Iannaccone, G. ; Giusi, G.
more authors

In this work we propose an analytical model for the gate current 1/f noise in CMOS devices. The model is based on a simple idea: one electron trapped in the dielectric switches-off the tunneling through the oxide over an effective blocking area. The model allows evaluating the effective trap density inside the gate dielectric as a function of energy from measurements of the gate current 1/f noise versus gate voltage. Experimental data on advanced CMOS devices confirm the validity and the usefulness of the proposed model.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.