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Nanoelectronic device simulation using extended Hückel theory (EHT) and NEGF

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4 Author(s)
Zhiping Yu ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Guan, Ximeng ; Ming Zhang ; Qiushi Ran

Nanoelectronic devices can be, in one way, characterized by the large surface/volume ratio in addition to the central role of quantum effects. This paper describes a computationally efficient way of obtaining the band-structure of the intrinsic device including the interface with metal contacts using the extended Huckel theory (EHT). Carrier quantum transport is then computed by NEGF (non-equilibrium Green¿s function). GNRFETs (graphene-nanoribbon FET) are simulated using this approach as an application example.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008