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A novel dual direction SCR (DDSCR) ESD protection device is implemented in HJTK 0.18-Â¿m CMOS process without deep N-well or T-well masks. Both parallel and anti-parallel metal routing method of multi-fingered DDSCR is investigated in this paper. It shows that metal routing in layout design plays an important role in the performance of multi-fingered DDSCR due to its symmetrical TLP I-V plot characteristics.
Date of Conference: 20-23 Oct. 2008