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Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers

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4 Author(s)
Gye Mo Yang ; Dept. of Electr. Eng./Electrophys., Univ. of Southern California, Los Angeles, CA, USA ; MacDougal, M.H. ; Pudikov, V. ; Dapkus, P.D.

The influeuce of mirror reflectivity on laser performance of InGaAs-GaAs vertical-cavity surface-emitting lasers fabricated by selective oxidation is investigated by the stepwise change of the number of pairs in top mirror stack after device fabrication. Devices with 18-pair stacks in the top mirror, which is the optimized number of pairs in this structure, show an output power over 1.9 mW and a slope efficiency of 55% while maintaining a low threshold current of 212 μA. The analysis of the threshold current and differential efficiency related to mirror reflectivity shows an internal quantum efficiency of 95%, an internal round-trip loss of 0.072, and a transparency current density of 71 A/cm2.

Published in:

Photonics Technology Letters, IEEE  (Volume:7 ,  Issue: 11 )