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Modeling of the effective mobility for polysilicon thin film transistor

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4 Author(s)
Bing-Hui Yan ; Institute of Microelectronics, School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China ; Bin Li ; Ruo-He Yao ; Xue-Ren Zheng

In this paper, a model of the effective mobility for the on-current of p-Si TFT is proposed, taking into account the gain size, the drain bias, the imperfection crystal scattering mechanism, and the surface-roughness scattering mechanism. It is found that at the linearity region, the effective mobility decreases with the drain bias increasing and increases with the grain size increasing. The simulation results are in a good agreement with the experimental data.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008