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In this paper, experimental studies on the carrier transport in silicon nanowire transistors (SNWTs) are reported, demonstrating their great potential as an alternative device structure for near-ballistic transport from top-down approach. Both ballistic efficiency and apparent mobility were characterized. A modified experimental extraction methodology for SNWTs is proposed, which takes into account the impact of quantum contact resistance. The highest ballistic efficiency is observed in sub-40 nm n-channel SNWTs due to their quasi-1D carrier transport. The apparent mobility is also extracted in comparison with the ballistic limit, which indicates that the gate-all-around SNWT can really be considered as a promising device architecture in close proximity to the ballistic transport.