By Topic

An experimental study on carrier transport in silicon nanowire transistors: How close to the ballistic limit?

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Runsheng Wang ; Inst. of Microelectron., Peking Univ., Beijing, China ; Jing Zhuge ; Ru Huang ; Liangliang Zhang
more authors

In this paper, experimental studies on the carrier transport in silicon nanowire transistors (SNWTs) are reported, demonstrating their great potential as an alternative device structure for near-ballistic transport from top-down approach. Both ballistic efficiency and apparent mobility were characterized. A modified experimental extraction methodology for SNWTs is proposed, which takes into account the impact of quantum contact resistance. The highest ballistic efficiency is observed in sub-40 nm n-channel SNWTs due to their quasi-1D carrier transport. The apparent mobility is also extracted in comparison with the ballistic limit, which indicates that the gate-all-around SNWT can really be considered as a promising device architecture in close proximity to the ballistic transport.

Published in:

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Date of Conference:

20-23 Oct. 2008