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High-Voltage SOI SJ-LDMOS With a Nondepletion Compensation Layer

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4 Author(s)
Wenlian Wang ; State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu ; Zhang, B. ; Li, Z. ; Chen, W.

A new superjunction LDMOS on silicon-on-insulator (SOI) with a nondepletion compensation layer (NDCL) is proposed. The NDCL can be self-adaptive to provide additional charges for compensating the charge imbalance while eliminating the substrate-assisted depletion effect. In addition, the high-density oxide interface charges at the top surface of the buried oxide layer (BOX) enhance the electric field in the BOX and improve the vertical breakdown voltage (BV). Numerical simulation results indicate that a uniform surface electric field profile is obtained and that the vertical electric field in BOX is increased to 6 times106 V/cm, which results in a high BV of 300 V for the proposed device with the BOX thickness of 0.5 mum and drift length of 15 mum on a thin SOI substrate.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 1 )

Date of Publication:

Jan. 2009

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