Skip to Main Content
In this letter, an original work in tunable (La,Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.