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Electrical Transport in a Semimetal–Semiconductor Nanocomposite

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7 Author(s)
Brown, E.R. ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA ; Williams, K. ; Weidong Zhang ; Suen, J.Y.
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Measurements are presented on the low-field electrical conductivity and moderate-field current-voltage characteristics in a nanocomposite structure of ErAs particles in an In0.53Ga0.47As host with Be compensation. The electrical conductivity displays strong temperature dependence with two types of transport mechanisms. At ~ 205 K and above, the low-field conductivity appears to be dominated by free electrons in In0.53Ga0.47As. Between 55 and 205 K, the conductivity is well explained by variable-range hopping, sigma = A exp(-B/T1/4), via Mott's law. The transport displays a soft breakdown effect at moderate bias fields that grows in threshold field with decreasing temperature. This is attributed to impact ionization of the Be dopants.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:8 ,  Issue: 3 )

Date of Publication:

May 2009

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