Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Anomalous Kink Effect in GaN High Electron Mobility Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Meneghesso, G. ; Dept. of Inf. Eng., Univ. of Padova, Padova ; Zanon, F. ; Uren, M.J. ; Zanoni, E.

An anomalous kink effect has been observed in the room-temperature drain current ID versus drain voltage V DS characteristics of GaN high electron mobility transistors. The kink is originated by a buildup (at low V DS) and subsequent release (at high V DS) of negative charge, resulting in a shift of pinch-off voltage VP toward more negative voltages and in a sudden increase in ID. The kink is characterized by extremely long negative charge buildup times and by a nonmonotonic behavior as a function of photon energy under illumination. The presence of traps in the GaN buffer may explain both spectrally resolved photostimulation data and the slow negative charge buildup.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 2 )