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Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

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6 Author(s)
Sang-Jun Choi ; Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin ; Jung-Hyun Lee ; Hyung-Jin Bae ; Woo-Young Yang
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TaN-pure-GeTe-Cu bipolar switching devices which can be adaptable to semiconductor processes were fabricated as a function of top-electrode sizes (0.2, 0.4, 10, and 50 mum). The on/off resistance change ratio increased highly with decreasing electrode size. In particular, the on/off resistance change ratio was about 103 when the electrode size was scaled down to 200 nm. We obtained the characteristics of conductive bridging memory cell using pure-GeTe film without any doping of Cu or Ag; we also determined the reason for the enhancement of the on/off resistance change ratio when scaling down the electrode size.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 2 )